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A method for planarizing a polysilicon layer of a low-temperature polysilicon device is provided. The method includes: Step S1: Crystallizing the low-
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Morphology and surface property of ZnO thin films as electron transporting layer in perovskite solar cells are crucial for obtaining high-efficient
extrinsic doping with aluminium significantly increases the conductivity of low temperature solution-processed AZO(X) NPs series based layers by several orde
FULL TEXT Abstract: A low-temperature (90 °C) and directly grown anatase titanium dioxide (TiO2) nanocrystalline film using successive ionic layer
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We propose a novel method to pattern the charge recombination layer (CRL) with a low-temperature solution-processable ZnO layer (under 150 • C) for
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We propose a novel method to pattern the charge recombination layer (CRL) with a low-temperature solution-processable ZnO layer (under 150 °C) for
Abstract: A low-temperature (90 °C) and directly grown anatase titanium dioxide (TiO2) nanocrystalline film using successive ionic layer adsorption and
2018126-Features high temperture and aging resistance PressureAverage layer of reinforcement 1 ply Packing highhose flexible epdm radiator hos
FULL TEXT Abstract: A low-temperature (90 °C) and directly grown anatase titanium dioxide (TiO2) nanocrystalline film using successive ionic layer
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